Related papers: Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer lay…
We report growth characteristics of epitaxial $\beta$-Na$_{0.6}$CoO$_{2}$ and $\gamma$-Na$_{0.7}$CoO$_{2}$ thin films on (001) sapphire substrates grown by pulsed-laser deposition. Reduction of deposition rate could change structure of…
The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane…
Heteroepitaxial spinel ferrites NiFe2O4 and CoFe2O4 films have been prepared by pulsed laser deposition (PLD) at various temperatures (175 - 690 {\deg}C) under ozone/oxygen pressure of 10 mTorr. Due to enhanced kinetic energy of ablated…
We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films…
Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties…
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent…
We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was…
We have investigated the growth of BaTiO3 thin films deposited on pure and 1% Nb-doped SrTiO3(001) single crystals using atomic oxygen assisted molecular beam epitaxy (AO-MBE) and dedicated Ba and Ti Knudsen cells. Thicknesses up to 30 nm…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…
We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi2Te3 grown on Si (1 1 1). The films are single crystals of high crystalline quality, which strongly depends…
Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (\alpha-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than…
Intermetallic binary compounds of europium reveal a variety of interesting phenomena due to the interconnection between two different magnetic and 4f electronic (valence) states, which are particularly close in energy. The valence states or…
The ultrawide-bandgap semiconductor $\beta$-Ga2O3 holds exceptional promise for next-generation power electronics and deep-ultraviolet optoelectronics, yet its widespread application is hindered by the lack of cost-effective, high-quality…
We report on the successful synthesis of highly conductive PdCoO2 ultrathin films on Al2O3 (0001) by pulsed laser deposition. The thin films grow along the c-axis of the layered delafossite structure of PdCoO2, corresponding to the…
KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing…
The superconducting and critical current properties of thin films of NiBi3 formed on the surface of carbon microfibers and sapphire substrates are reported. The NiBi3 coated carbon microfibers were prepared by reacting 7 {\mu}m diameter…
We report the growth of thin films of the mixed valence compound YbAl$_{3}$ on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction,…
Epitaxial NdBa2Cu3O7-x films with a hybrid nanoscale defect structure comprised of BaZrO3 nanodot arrays aligned along the c-axis in one half of the film thickness and aligned perpendicular to the c-axis in the other half thickness of the…
Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional…
Transition metal oxide thin films show versatile electrical, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the…