Related papers: $g$-factor engineering with InAsSb alloys toward z…
Recent tunneling conductance measurements of Majorana nanowires show a strong variation in the magnetic field dependence of the superconducting gap among different devices. Here, we theoretically study the magnetic field dependence of the…
The structure of the electron quantum size levels in spherical nanocrystals is studied in the framework of an eight--band effective mass model at zero and weak magnetic fields. The effect of the nanocrystal surface is modeled through the…
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with…
We report on a comprehensive study of spin-1/2 Kondo effect in a strongly-coupled quantum dot realized in a high-quality InAs nanowire. The nanowire quantum dot is relatively symmetrically coupled to its two leads, so the Kondo effect…
Unlike in conventional semiconductors, both the chemical potential and the band gap in bilayer graphene (BLG) can be tuned via application of external electric field. Among numerous device implications, this property also designates BLG as…
We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated…
The self-consistent GW band gaps are known to be significantly overestimated. We show that this overestimation is, to a large extent, due to the neglect of the contribution of the lattice polarization to the screening of the…
Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a…
We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…
The nonlinear Zeeman effect can induce splittings and asymmetries of magnetic-resonance lines in the geophysical magnetic-field range. We demonstrate a scheme to suppress the nonlinear Zeeman effect all optically based on spin locking. Spin…
We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric…
Despite its potential for device application, the non-magnetic Zeeman effect has only been predicted and observed in two-dimensional compounds. We demonstrate that non-centrosymmetric three-dimensional compounds can also exhibit a…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials. Experimental approaches screening a large range of possible…
The role of the interaction with the nearest electronic state $^3\Sigma^+_{0^-}$ on the hyperfine structure and magnetic properties of the $a(1)[^3\Sigma^+_1]$ state of PbO is assessed. The accounting for this contribution leads to…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
In the presence of spin-orbit scattering, the splitting of an energy level in a generic small metal grain due to the Zeeman coupling to a magnetic field B depends on the direction of B, as a result of mesoscopic fluctuations. The anisotropy…
Compound semiconductor alloys of the type ABC find widespread applications as their electronic bulk band gap varies continuously with x, and therefore a tayloring of the energy gap is possible by variation of the concentration. We model the…
The origin of the g-factor of the two-dimensional (2D) electrons and holes moving in the periodic crystal lattice potential with the perpendicular magnetic and electric fields is discussed. The Pauli equation describing the Landau…