Related papers: $g$-factor engineering with InAsSb alloys toward z…

We utilize the van de Pauw technique combined with Density Functional Theory to show that an external voltage applied to superconducting AlB2-type compounds, such as MgB2 and Mg(B1.9C0.1), effects substantive changes in transition…

One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles…

Magnetic tuning of the bound exciton states and corresponding giant Zeeman splitting (GZS) between {\sigma}^{+} and {\sigma}^{-} excitonic transitions in CdTe/Cd_{1-x}Mn_{x}Te quantum ring has been investigated in the Faraday configuration…

The structural, electronic, dielectric and vibrational properties of zinc-blende (ZB) InAs were studied within the framework of density functional theory (DFT) by employing local density approximation and norm-conserving pseudopotentials.…

The inverted band structure discovered in InAs/GaSb quantum well (QW) is found to host the topological quantum spin Hall (QSH) states. A QSH insulator hosts counterpropagating spin-polarized edge states that are protected by the…

We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies…

We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the…

We present a review of experimental and theoretical studies of the spin response of charge carriers to an external magnetic field in bulk semiconductors and semiconductor nanostructures. The linear response is quantitatively characterized…

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, $\alpha$-(BEDT-TTF)$_2$I$_3$ salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the…

It is known experimentally that at not very large filling factors $\nu$ the quantum Hall conductivity peaks corresponding to the same Landau level number $N$ and two different spin orientations are well separated. These peaks occur at…

Alloying stands out as a pivotal technological method employed across various compounds, be they metallic, magnetic, or semiconducting, serving to fine-tune their properties to meet specific requirements. Ternary semiconductors represent a…

We perform hybrid functional and quasi-particle band structure calculations with spin-orbit interaction to investigate the band structures of Mg2Si, Mg2Ge, and Mg2Sn. For all Mg2X materials, where X = Si, Ge, and Sn, the characteristics of…

We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled QDs…

We investigate the possibility of measuring magnetic field strength in G-band bright points through the analysis of Zeeman polarization in molecular CH lines. To this end we solve the equations of polarized radiative transfer in the G band…

An asymptotic corrected exchange hole potential analogous to Becke-Roussel [A. D. Becke and M. R. Roussel, Phys. Rev. A 39, 3761 (1989)] is constructed by modeling the exchange hole using the generalized coordinate transformation based on…

The renormalization of the band structure at zero temperature due to electron-phonon coupling is investigated in diamond, BN, LiF and MgO crystals. We implement a dynamical scheme to compute the frequency-dependent self-energy and the…

Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…

We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron…

New scheme of definition of g-factors as ground as excited optical states of a paramagnetic ion in zero external constant magnetic field has been proposed and experimentally realized in optical systems in which Zeeman Effect is manifested.…

We demonstrated the cancellation of the external magnetic field by the nuclear field at one edge of the nuclear polarization bistability in single InAlAs quantum dots. The cancellation for the electron Zeeman splitting gives the precise…