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This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the…
Recently, evidence for a conducting surface state below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the conducting surface state and the bulk phase of FeSi were probed via…
Thermal transient responses of superconducting magnets can be simulated using the finite element (FE) method. Some accelerator magnets use cables whose electric insulation is significantly thinner than the bare electric conductor. The FE…
Understanding the thermal behaviour of superconducting accelerator magnets is essential to ensure their stable and reliable operation. This work presents an extension of the Finite Element Quench Simulator (FiQuS) Multipole module to…
In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and…
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
As the technology node continues to shrink, nanosheet field effect transistors (NSFETs) and complementary FETs (CFETs) become valid candidates for the 3nm and sub-nanometre nodes. However, due to the shrinking device size, self-heating and…
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The…
We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$\nu$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ…
On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…
In this work we study the self-heating (1) effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fi cross section in rectangular, trapeze and triangle form. The lattice temperature dependence on the…
A series of sigma-phase Fe_{100-x}V_x samples with 34.4 < x < 59.0 were investigated by neutron and X-ray diffraction and Mossbauer spectroscopy (MS) techniques. The first two methods were used for verification of the transformation from…
Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range $300-800$ K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting…
This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters…
The theoretical picture of thermal field-emission (TFE) from semiconductors has been limited to 1D and 2D models. This can be attributed to the complex and interdependent phenomena that is involved in TFE from semiconductors which makes the…
Interconnect is one of the main performance determinant of modern integrated circuits (ICs). The new technology of vertical ICs places circuit blocks in the vertical dimension in addition to the conventional horizontal plane. Compared to…
Due to the sensitivity of the piezoelectric layer in surface acoustic wave (SAW) resonators to temperature, a method of achieving device stability as a function of temperature is required. This work presents the design, modeling and…