This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in house designed test structure.
@article{arxiv.1304.1781,
title = {Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs},
author = {Mario Weiß and Amit Kumar Sahoo and Cristian Raya and Marco Santorelli and Sébastien Fregonese and Cristell Maneux and Thomas Zimmer},
journal= {arXiv preprint arXiv:1304.1781},
year = {2013}
}