Related papers: Characterization of intra device mutual thermal co…

This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal…

We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the…

The junction temperature is a very important parameter for monitoring power electronics converters based on MOSFET transistors. They offer the possibility of switching at relatively higher frequencies than other transistors like IGTBTs.…

Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…

Precise temperature measurement at micro/nanoscale is crucial across various domains including physical sciences, chemical processes, industrial production, medical diagnosis, weather forecasting, electronics, and biology. Micro/nanoscale…

We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…

Using Dynamical Mean Field Theory (DMFT) and Monte Carlo (MC) simulations, we study the ferromagnetic transition temperature Tc of a two-band model for Diluted Magnetic Semiconductors (DMS), varying coupling constants, hopping parameters,…

Self-heating (SHE) TCAD numerical simulations have been performed, for the first time, on 30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature rise dTmax and the thermal resistance Rth are computed as…

As the technology node continues to shrink, nanosheet field effect transistors (NSFETs) and complementary FETs (CFETs) become valid candidates for the 3nm and sub-nanometre nodes. However, due to the shrinking device size, self-heating and…

In the quest of why there should be a single transition temperature in a multi-gapped system like Fe-based materials we use two band model for simplicity. The model comprises of spin density wave (SDW), orbital density wave (ODW) arising…

This paper demonstrates the use of voltage noise thermometry, with a cross-correlation technique, as a dissipation-free method of thermometry inside a CMOS integrated circuit (IC). We show that this technique exhibits broad agreement with…

This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…

We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…

In this paper, electrothermal field phenomena in electronic components are considered. This coupling is tackled by multiphysical field simulations using the Finite Integration Technique (FIT). In particular, the design of bonding wires with…

We review briefly the properties of a mixture of mutually interacting bosons (bound electron pairs) and itinerant fermions on a lattice (the boson-fermion model). The calculations of the superconducting phase transition temperature…

Electro-thermal coupling in semiconductor bolometers is known to create nonlinearities in transient detector response, particularly when such detectors are biased outside of their ideal regions (i.e. past the turnover point in their IV…

In this work, we report the fabrication of a high temperature measurement setup to measure Figure of merit (ZT). This setup facilitates the simultaneous measurement of Seebeck coefficient ({\alpha}), thermal conductivity (\kappa), and…

This work builds on the previous introduction [1] of a coupled experimental-computational system devised to fully characterize the thermal behavior of complex 3D submicron electronic devices. The new system replaces the laser-based surface…

We report on the development and demonstration of a MHz frequency domain multiplexing (FDM) technology to read out arrays of cryogenic transition edge sensor (TES) X-ray microcalorimeters. In our FDM scheme, TESs are AC-biased at different…

Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip…