Related papers: Negative thermal expansion coefficient and amorphi…
We study the Seebeck effect in the three-dimensional Dirac electron system based on the linear response theory with Luttinger's gravitational potential. The Seebeck coefficient $S$ is defined by $S = L_{12} / L_{11} T$, where $T$ is the…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
By means of fluctuationnal electrodynamics, we calculate radiative heat flux between two pla-nar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for…
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it…
Transmission electron microscopy, scanning transmission electron tomography, and electron energy loss spectroscopy were used to characterize three-dimensional artificial Si nanostructures called "metalattices", focusing on Si metalattices…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
We study negative thermal expansion (NTE) in model lattices with multiple atoms per cell and first- and second-nearest neighbor interactions using the (anharmonic) Morse potential. By exploring the phase space of neighbor distances and…
Silicon carbide (SiC) is an important technological material, but its high-temperature phase diagram has remained unclear due to conflicting experimental results about congruent versus incongruent melting. Here, we employ large-scale…
In this letter, we study the near-field radiative heat transfer between two metamaterial substrates coated with silicon carbide (SiC) thin films. It is known that metamaterials can enhance the near-field heat transfer over ordinary…
The barrel section of the novel MIP Timing Detector (MTD) will be constructed as part of the upgrade of the CMS experiment to provide a time resolution for single charged tracks in the range of $30-60$ ps using LYSO:Ce crystal arrays read…
Structure and spectral energy distributions (SEDs) of externally irradiated circumstellar disks are often computed on the basis of the two-temperature model of Chiang & Goldreich. We refine these calculations by using a more realistic…
The thermal expansion of the wide band gap semiconductor MgSiN$_{2}$ has been determined using density functional calculations in combination with the quasi-harmonic approximation. We find that the thermal expansion is rather small in good…
With density functional theory we have performed molecular dynamics simulations of ZrC which displayed spontaneous Frenkel pair formation at a temperature of 3200 K, some 500 K below the melting point. To understand this behaviour, rarely…
The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E'_\gamma$ defects in the $a$-SiO$_2$ dielectrics, but the conventional ``hole transport-trapping'' model of defect generation fails to explain…
In this work, the thermo-optic coefficient (TOC) of the silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition is characterized. We found that the TOC of the film increases as its…
We investigate the layered magnetic semiconductor EuTe4, focusing on its intricate charge-density wave (CDW) states near and above room temperature through single-crystal X-ray diffraction (XRD), magnetic, and thermoelectric…
Statistics and thermally activated dynamics of crack nucleation and propagation in a two-dimensional heterogeneous material containing quenched randomly distributed defects are studied theoretically. Using the generalized Griffith criterion…
In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized…
We proposed a new way, adding intertube atoms, to enhance interfacial thermal conductance (ITC) between SiC-carbon nanotube (CNT) array structure. Non-equilibrium molecular dynamics method was used to study the ITC. The results show that…