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Recent reported very high thermal conductivities in the cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully…
Spectral Energy Distribution (SED) of the broad-band continuum emission from black-hole accretion discs can serve as a tool to measure parameters of the central body and constrain the geometry of the inner accretion flow. We focus on the…
The recently reported nickel carbide superconductor, body centered tetragonal $I4/mmm$ Th$_2$NiC$_2$ with T$_c$ = 8.5 K increasing to 11.2 K upon alloying Th with Sc, is found to have very fine structure in its electronic spectrum,…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by…
The thermal expansion of pure and Ti-bearing fused silica was estimated using free energy minimization lattice dynamics calculations in the quasiharmonic approximation. While the calculations give the expected drop in the coefficient of…
Carrier Selective (CS) Silicon solar cells are increasingly explored as a low cost alternative to PN junction Silicon solar cells. While the recent trends on power conversion efficiency are encouraging, the temperature coefficient and hence…
Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the…
We investigate the thermal expansion of low thermal noise Fabry-Perot cavities made of Low Thermal Expansion (LTE) glass spacers and Fused Silica (FS) mirrors. The different thermal expansion of mirror and spacer deforms the mirror. This…
The mechanism responsible for the emission of clusters from heavy ion irradiated solids is proposed to be thermal spikes. Collision cascade-based theories describe atomic sputtering but cannot explain the consistently observed experimental…
Considering screeening of electron scattering interactions in terms of the finite-temperature STLS theory and solving the linearized Boltzmann equation (with no appeal to a relaxation time approximation), we present a theoretical analysis…
Silicon carbide is a promising material for radiation-hard detectors due to its wide bandgap, low leakage current, high critical electric field, and high saturation velocity. A key obstacle for its use in high-radiation environments is the…
In ion cancer therapy, high-intensity ion beams are used to treat tumors by taking advantage of the Bragg-Peak. Typical ion therapy centers use particle rates up to $10^{10}$ ions/second for treatment. On the other hand, such intensities…
The impact of irradiation on the thermal and electronic properties of materials is a persistent puzzle, particularly defect formation at the atomic and nanoscales. This work examines the nanoscale effects of low-energy irradiation on…
Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a…
The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divacancy in 4H-SiC, whereas the divacancies in 6H- and 3C-SiC…
We demonstrate alpha-particle detection in an n-type 4H-SiC Schottky diode detector up to an unprecedented temperature of 500 {\deg}C using an Am-241 disc source. The measured spectra were used to calculate the electron-hole pair creation…
We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser…
The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…
Static and dynamical properties of elastic phase transitions under the influence of short--range defects, which locally increase the transition temperature, are investigated. Our approach is based on a Ginzburg--Landau theory for…