Related papers: Negative thermal expansion coefficient and amorphi…
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective,…
By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous…
The residual stress induced in assembly is a common concern in electronic packaging. The mismatch in coefficient of thermal expansion between borosilicate glass and silicon, upon temperature variation, generates an internal stress state.…
MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…
We report measurements of the Seebeck effect in both the $ab$ plane ($S_{\rm a}$) and along the $c$ axis ($S_{\rm c}$) of the cuprate superconductor La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_4$ (Nd-LSCO), performed in magnetic fields large enough…
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing,…
Using molecular dynamics simulations we study the thermodynamic behavior of a single-component covalent material described by the recently proposed Environment-Dependent Interatomic Potential (EDIP). The parameterization of EDIP for silicon…
In this letter, we report the measurement of the coefficient of thermal expansion (CTE) of single-crystal silicon from 655 mK to 16 K using an ultra-stable laser based on a single-crystal silicon Fabry-Perot cavity. Below 1 K temperatures,…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
The recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into…
Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular…
A general formulation for the cross-spectral density tensor enabling calculation of the spatial correlation of the thermally generated electromagnetic field in layered media is derived. The formulation is based on fluctuational…
A finite temperature extension of the effective holographic models for QCD (EHQCD), proposed in Ref.[1], is investigated in the present work. EHQCD models are characterized by two parameters, the conformal dimension of the relevant operator…
We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, with activation energies…
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect…
Recently colossal Seebeck coefficient ($S$) has found in the several thermoelectric (TE) materials. We present colossal $S$ and large thermal electron motivate force (EMF) reproduced by space charge (SC) model, introducing multi-Debye…
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC)…
Linear thermal expansion coefficient (TEC) and specific heat of Ti bulk is investigated by means of molecular dynamics simulation. Elastic Minimum Image Convention of periodic boundary conditions is introduced to allow the bulk to adjust…
In this paper we describe a spatial decomposition of the thermal conductivity, what we name "site-projected thermal conductivity", a gauge of the thermal conduction activity at each site. The method is based on the Green-Kubo formula and…
Two 75mm 4H-SiC single crystals are grown by the physical vapor transport (PVT) technique, using different insulation materials. The insulation material of higher thermal conductivity led to an increased radial temperature gradient. The…