Related papers: The interface states in gate-all-around transistor…
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…
We demonstrate an exotic doubled-channeled NT GAAFET (DC NT GAAFET) structure with Ion boost in comparison with NT GAAFET and NW GAAFET with the same footprint. Ion gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared…
The manipulation of neutral atoms by light is at the heart of countless scientific discoveries in the field of quantum physics in the last three decades. The level of control that has been achieved at the single particle level within arrays…
Technological progress towards next-generation electronics critically relies on achieving faster switching with reduced energy consumption. Because device operation speeds are fundamentally constrained by the intrinsic properties of…
Quantum circuit simulation is paramount to the verification and optimization of quantum algorithms, and considerable research efforts have been made towards efficient simulators. While circuits often contain high-level gates such as oracles…
By utilizing the current transients in scanning tunneling spectroscopy, the local interfacial electronics between multiwalled carbon nanotubes and several supporting substrates has been investigated. Voltage offsets in the tunneling spectra…
We show how a new quantum property, a geometric phase, associated with scattering states can be exhibited in nanoscale electronic devices. We propose an experiment to use interference to directly measure the effect of the new geometric…
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…
We study clean, edge-contacted graphene/superconductor interfaces in both the quantum Hall (QH) and zero field regimes. We find that Andreev reflection is substantially stronger than at an interface with a semiconductor two-dimensional…
Three-qubit gates are highly beneficial operations in quantum computing, enabling compact implementations of quantum algorithms and efficient generation of multipartite entangled states. However, realizing such gates with high fidelity…
We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
Geometric phases induced in quantum evolutions have built-in noise-resilient characters, and thus can find applications in many robust quantum manipulation tasks. Here, we propose a feasible and fast scheme for universal quantum computation…
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a…
With quantum computing devices increasing in scale and complexity, there is a growing need for tools that obtain precise diagnostic information about quantum operations. However, current quantum devices are only capable of short…
We find stationary thin-brane geometries that are dual to far-from-equilibrium steady states of two-dimensional holographic interfaces. The flow of heat at the boundary agrees with the result of CFT and the known energy-transport…
Advances in quantum technologies are often limited by slow device characterization, complex tuning requirements, and scalability challenges. Spin qubits in electrostatically defined quantum dots provide a promising platform but are not…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
Quantum simulation algorithms often require numerous ancilla qubits and deep circuits, prohibitive for near-term hardware. We introduce a framework for simulating quantum channels using ensembles of low-depth circuits in place of many-qubit…
The preparation of a quantum state using a noisy quantum computer (gate noise strength $\delta$), will necessarily affect an O($\delta$)-fraction of the qubits, no matter which protocol is used. Here, we show that fault-tolerant quantum…