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Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the…
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and…
This paper presents a comprehensive approach to generating and utilizing accurate equivalent circuits for structures commonly found in the particle accelerator domain. After a discussion of equivalent circuits in general, a systematic…
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with…
Accurate characterization of plasmonic materials' dispersion and efficiency remains a key challenge for next-generation nanophotonic devices. Here, we theoretically demonstrate that the plasmon dispersion relation at a metal-dielectric…
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…
We examine oscillations as a function of Fermi energy in the capacitance of a mesoscopic cavity connected via a single quantum channel to a metallic contact and capacitively coupled to a back gate. The oscillations depend on the…
The effect of screening of the coulomb interaction between two layers of two-dimensional electrons, such as in graphene, by a highly doped semiconducting substrate is investigated. We employ the random-phase approximation to calculate the…
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…
Teaching by direct models in science has been weakening the learning process of the students, because the real problems in engineering are not solved by direct models instead commonly they are solved by inverse models. On the other hand,…
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
The constant phase element (CPE) with a frequency-independent negative phase between current and voltage is used extensively in e.g. the bioimpedance and electrochemistry fields. Its physical meaning is only partially understood. Here we…
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…
Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…