Related papers: Tunneling valley Hall effect driven by tilted Dira…
Quantum materials have exhibited attractive electro-mechanical responses, but their piezoelectric coefficients are far from satisfactory due to the lack of fundamental mechanisms to benefit from the quantum effects. We discovered the valley…
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and…
In a recent experiment on the interlayer magnetoresistance in the quasi-two-dimensional organic salt, $\alpha$-(BEDT-TTF)$_2$I$_3$, it has been observed that at low temperatures, interlayer tunneling attains phase coherence, leading to the…
The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for…
Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
We study valley-dependent spin transport theoretically in monolayer transition-metal dichalcogenides in which a variety of spin and valley physics are expected because of spin-valley coupling. The results show that the spins are…
We report the synthesis and magneto-transport measurements on the single crystal of Dirac semimetal PdTe$_2$. The de Haas-van Alphen oscillations with multiple frequencies have been clearly observed, from which the small effective masses…
The anomalous valley Hall effect (AVHE) is a pivotal phenomenon that allows for the exploitation of the valley degree of freedom in materials. A general strategy for its realization and manipulation is crucial for valleytronics. Here, by…
We investigate a valleytronic device based on graphene with charge separation at different sublattices and correspondingly at nonequivalent valleys. We characterize the maximality condition of valley polarization and investigate the…
Recent experiments have reported a lot of spectacular transport properties in topological materials, such as quantum oscillations and three-dimensional (3D) quantum Hall effect (QHE) in ZrTe$_5$. In this paper, by using a strong topological…
We study the orbital Hall response in buckled two-dimensional Dirac materials using a unified framework that includes an antiferromagnetic exchange field, a perpendicular electric field, and intrinsic spin-orbit coupling. We show that the…
In this paper the possibility to bring about the double- valley Dirac fermions in some quantum structures is predicted. These quantum structures are: strained 3D Hg$_{1-x}$Cd$_x$Te topological insulator (TI) with strong interface inversion…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
The third-order anomalous Hall effect (TOAHE) driven by Berry connection polarizability in Dirac materials offers a promising avenue for exploring quantum geometric phenomena. We investigate the role of impurity scattering on TOAHE using…
Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl…
Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T'/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures,…
Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
We introduce a generalized Hamiltonian describing not only all topological phases observed experimentally in Kekul\'e graphene (KekGr) but predicting also new ones. These phases show features like a quadratic band crossing point, valley…