English

Double valley Dirac fermions for 3D and 2D Hg$_{1-x}$Cd$_x$Te with strong asymmetry

Strongly Correlated Electrons 2017-07-03 v1

Abstract

In this paper the possibility to bring about the double- valley Dirac fermions in some quantum structures is predicted. These quantum structures are: strained 3D Hg1x_{1-x}Cdx_xTe topological insulator (TI) with strong interface inversion asymmetry and the asymmetric Hg1x_{1-x}Cdx_xTe double quantum wells (DQW). The numerical analysis of the dispersion relation for 3D TI Hg1x_{1-x}Cdx_xTe for the proper Cd (xx)-content of in the Hg1x_{1-x}Cdx_xTe-compound clearly show that the inversion symmetry breaking together with the unaxial tensile strain causes splitting each of Dirac nodes (two belonging to two interfaces) into two in the proximity of Γ\Gamma-point. The similar effects can be obtained for asymmetric Hg1x_{1-x}Cdx_xTe DQW with the proper content of Cd and proper width of the quantum wells. The aim of this work is to explore the inversion symmetry breaking in 3D TI and 2D DQWs mixed HgCdTe-systems. It is shown that this symmetry breaking leads to the dependence of carriers energy vs quasi-momentum similar to that of Weyl fermions.

Keywords

Cite

@article{arxiv.1706.10196,
  title  = {Double valley Dirac fermions for 3D and 2D Hg$_{1-x}$Cd$_x$Te with strong asymmetry},
  author = {M. Marchewka},
  journal= {arXiv preprint arXiv:1706.10196},
  year   = {2017}
}

Comments

arXiv admin note: text overlap with arXiv:1605.09214 by other authors