English

Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene

Mesoscale and Nanoscale Physics 2020-08-11 v2 Materials Science

Abstract

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable bandgaps due to their accidental band-crossing origin. Here we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the 2D form of tellurium, possesses chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial pi Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.

Keywords

Cite

@article{arxiv.1908.11495,
  title  = {Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene},
  author = {Gang Qiu and Chang Niu and Yixiu Wang and Mengwei Si and Zhuocheng Zhang and Wenzhuo Wu and Peide D. Ye},
  journal= {arXiv preprint arXiv:1908.11495},
  year   = {2020}
}

Comments

5 figures for main text; 8 figures for supporting information