Related papers: Sputter-deposited PZT-on-Silicon Optimization for …
Technological advancements are strongly required to fulfill the demands of new accelerator devices with the highest accelerating gradients and operation reliability for the future colliders. To this purpose an extensive R&D regarding…
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…
The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by…
The high frequency performance of strong piezoelectric materials like PZT remains relatively less explored due to the assumption of large dielectric/ferroelectric losses at GHz frequencies. Recently, the advent of magnetoelectric technology…
Ceramic solid solutions of PbZr(1-x)TixO3 (PZT) with compositions of about x= 0.50 are well-known for their extraordinarily large piezoelectric responses. The latter are highly anisotropic, and it was recently shown that, for the…
An unconventional yet facile low-energy method for uniquely synthesizing neat poly(vinylidene fluoride) (PVDF) films for energy harvesting applications through piezo-to-piezo (P2P) conversion is reported. In this novel concept, the…
A current approach to depositing highly plasmonic titanium nitride films using the magnetron sputtering technique assumes that the process is performed at temperatures high enough to ensure the atoms have sufficient diffusivities to form…
Scalable, high-speed, small-footprint photonic switching platforms are essential for advancing optical communication. An effective optical switch must operate at high duty cycles with fast recovery times, while maintaining substantial…
We report a more than 10-fold enhancement of the piezoelectric coefficient $d_{33}$ of polycrystalline CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$) films when interfacing them with ferroelectric PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT). Piezo-response force…
A wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization (Pr) value to-date was achieved through tuning of the ozone pulse duration, the annealing process, and the metal/insulator interface. The ozone…
We have investigated the size effect in lead zirconate titanate (PZT) thin films with a range of manganese (Mn) doping concentrations. We found that the size effect in the conventional Pt/PZT/Pt thin-film capacitors could be systematically…
We investigate coherent phonon propagation in a thin film of ferroelectric PbZr0.2Ti0.8O3 (PZT) by ultrafast x-ray diffraction (UXRD) experiments, which are analyzed as time-resolved reciprocal space mapping (RSM) in order to observe the…
Recent decades have seen significant advancements in integrated photonics, driven by improvements in nanofabrication technology. This field has developed from integrated semiconductor lasers and low-loss waveguides to optical modulators,…
Bi4Ti3O12 (BIT) has been considered as material for UV detector since it has optical band gap of about 3.5 eV. Unlike the most used material for this purpose, such as GaN and AlN, BIT is a ferroelectric oxide material. It has shown good…
We report on the development and extensive characterization of co-sputtered tantala-zirconia thin films, with the goal to decrease coating Brownian noise in present and future gravitational-wave detectors. We tested a variety of sputtering…
Lead based relaxor ferroelectric thin films have been of technological importance due to excellent properties for several commercial applications. However subtleness and high cost of fabrication have plagued of these materials. In this work…
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material…
Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric…
A multilayer perovskite thin film resistive memory device has been developed comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer layer…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…