Related papers: Sputter-deposited PZT-on-Silicon Optimization for …
In the present work, ultrathin films of Zinc oxide (ZnO) and Aluminum doped zinc oxide (AZO) with 20 nm thick were fabricated at 300 K on glass and Polyethylene terephthalate (PET) substrates by means of directcurrent sputtering method. The…
This paper reports the application of zinc oxide (ZnO) in the pressure sensors that can be integrated with a microelectromechanical system (MEMS). ZnO is one of the materials that has received a great deal of attention due to its unique…
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction…
Recent developments in nanomagnetism and spintronics have enabled the use of ultrafast spin physics for terahertz (THz) emission. Spintronic THz emitters, consisting of ferromagnetic FM / non-magnetic (NM) thin film heterostructures, have…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric Al$_{1-x}$Sc$_x$N thin films with very high Sc content. Al$_{0.6}$Sc$_{0.4}$N layers were deposited by reactive sputtering from a 300 mm…
(Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent…
Many ferroelectric devices are based on doped lead zirconate titanate (PZT) ceramics with compositions near the morphotropic phase boundary (MPB), at which the relevant material's properties approach their maximum. Based on a synchrotron…
Highly textured chalcogenide films have recently gained significant interest for phase-change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as…
Piezoelectric PZT solid solutions were studied as a function of pressure and temperature. Moderate pressure is found to induce phase transitions to monoclinic phases (Cm,Cc) for Ti-rich PZT, which are the same ferroelectric phases…
Interfacing electrical and optical systems is a ubiquitous requirement for modern networks. Competitive footprint, efficiency, and bandwidth figures have propelled interest in deploying integrated electro-optic modulators based on Pockels…
Metal oxides with strong nonlinear optical properties and wide transparency window are key materials for the development of compact and efficient photonic integrated circuits used for electro-optic modulators and entangled photon sources.…
Tunable focusing is a desired property in a wide range of optical imaging and sensing technologies but has tended to require bulky components which cannot be integrated on-chip and have slow actuation speeds. Recently, integration of…
Among the n-type metal oxide materials used in the planar perovskite solar cells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide (TiO2) due to its relatively high electron mobility, high transparency, and versatile…
Copper deposition has been carried out at various time span on glass slide and silicon substrate by using indigenously developed unbalanced type DC magnetron sputtering system. The main objective of this work is to study the crystalline…
We investigate the etching characteristics of PIN-PMN-PT crystals, exploring various wet etching solutions, reactive ion etching gases, and ion beam etching. The etch rate and surface roughness are systematically measured for each method. A…
Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…