Related papers: Defect theory under steady illuminations and appli…
Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold…
In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally…
We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a…
A new variational method for studying the equilibrium states of an interacting particles system has been proposed. The statistical description of the system is realized by means of a density matrix. This method is used for description of…
Hydrogenated amorphous silicon (a-Si:H) has had a long standing role as a passivating dielectric for c-Si, often utilized in the early development of ICs and more recently for Si solar cells. Although it has been studied for more than 60…
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are…
We analyze the doping dependence of the intensity and energetical position of shadow states in high -T$_{c}$ superconductors within the 2D Hubbard model and using our recently developed numerical method for the self consistent summation of…
A previously unknown effect-giant spatial redistribution of the electric field strength in a crystal under illumination of the structure - was discovered and investigated in real photoresistors on high-resistivity (semi-insulating)…
The cryogenic detectors in the form of bolometers are presently used for different applications, in particular for very rare or hypothetical events associated with new forms of matter, specifically related to the existence of Dark Matter.…
The fragmentation of thermalized sources is studied using a version of the Statistical Multifragmentation Model which employs state densities that take the pairing gap in the nuclear levels into account. Attention is focused on the…
One of the characteristics of disordered semiconductors is the slow thermalization of charge carriers after excitation due to photoabsorption or high electric fields. An elegant way to capture the effects of the latter on the conductivity…
Ultrafast optical excitation of metals induces a non-equilibrium energy distribution in the electronic system, with a characteristic step-structure determined by Pauli blocking. On a femtosecond timescale, electron-electron scattering…
Two-dimensional carbon, or graphene, is a semi-metal that presents unusual low-energy electronic excitations described in terms of Dirac fermions. We analyze in a self-consistent way the effects of localized (impurities or vacancies) and…
The peculiarities of electric current are studied occurring in semiconductors with strongly nonuniform distribution of charge carriers. The formation of such nonuniformities and the regulation of carrier mobilities can be realized by means…
The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but…
Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to…
We study the electron-energy loss spectra of strongly correlated electronic systems doped away from half-filling using dynamical mean-field theory ($d=\infty$). The formalism can be used to study the loss spectra in the optical (${\bf…
Irradiation of the strong light on the material leads to numerous non-linear effects that are essential to understand the physics of excited states of the system and for optoelectronics. Here, we study the non-linear thermoelectric effect…
Chemical adsorption of the species at semiconductor surfaces is analyzed showing the existence of the two contributions to adsorption energy: bond creation and charge transfer. It is shown that the energy of quantum surface states is…
I present a theory of electron dynamics in semiconductors with slowly varying composition. I show that the frequency-dependent conductivity, required for the description of transport and optical properties, can be obtained from a knowledge…