Related papers: Defect theory under steady illuminations and appli…
Electronic Raman scattering from high- and low-energy excitations was studied as a function of temperature, extent of hole doping, and energy of the incident photons in Bi_2Sr_2CaCu_2O_{8 \pm \delta} superconductors. For underdoped…
The electrochemical doping transformation in organic semiconductor devices is studied in application to light-emitting cells. It is shown that the device performance can be significantly improved by utilizing new fundamental properties of…
Using a new method for the solution of the FLEX-equations, which allows the determination of the self energy $\Sigma_{\bf k}(\omega)$ of the $2D$ Hubbard model on the real frequency axis, we calculate the doping dependence of the…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507,…
Understanding how the electronic structure of electrodes influences electrocatalytic reactions has been a longstanding topic in the electrochemistry community, with predominant attention paid to metallic electrodes. In this work, we present…
We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for…
The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the…
Making use of the energetics and equations of state of defective uranium dioxide that calculated with first-principles method, we demonstrate a possibility of constraining the formation energy of point defects by measuring the transition…
In the present work, a theoretical study of electron-phonon (electron-ion) coupling rates in semiconductors driven out of equilibrium is performed. Transient change of optical coefficients reflects the band gap shrinkage in covalently…
When a nucleus in an atom undergoes a collision, there is a small probability to inelastically excite an electron as a result of the Migdal effect. In this Letter, we present a first complete derivation of the Migdal effect from dark…
Determination of defect ionization energy in low-dimensional semiconductors has been a long-standing unsolved problem in first-principles defect calculations because the commonly used methods based on jellium model introduce an unphysical…
Photo-excited carriers, distributed among the localized states of self-assembled quantum dots, often show very anomalous temperature dependent photoluminescence characteristics. The temperature dependence of the peak emission energy may be…
A nanowire with its two ends fixed at two different temperatures by external baths is the simplest example of a fermionic system with a temperature inhomogeneity, and could be an easy platform to study thermodynamic and transport properties…
Semi-holography, originally proposed as a model for conducting lattice electrons coupled to a holographic critical sector, leads to an effective theory of non-Fermi liquids with only a few relevant interactions on the Fermi surface in the…
We address the intervention of classical-like behavior, well documented in experimental studies of strongly correlated electron systems of solids that emerges at temperatures $T$ far below the Debye temperature $T_D$. We attribute this…
Electronic Raman scattering measurements have been performed on hole doped copper oxide superconductors as a function of temperature and doping level. In the superconducting state coherent Bogoliubov quasiparticles develop preferentially…
We measure the defect density as a function of time at different temperatures in simulations of a two dimensional system of interacting particles. Just above the solid to liquid transition temperature, the power spectrum of the defect…
Nonequilibrium processes in semiconductors are considered with highly nonuniform initial densities of charge carriers. It is shown that there exist such distributions of charge densities under which the electric current through a sample…
The inductance/impedance due to thin metallic structures in non-destructive testing (NDT) is difficult to evaluate. In particular, in Finite Element Method (FEM) eddy current simulation, an extremely fine mesh is required to accurately…