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Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is…
The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb…
Manipulating the electrostatic double layer and tuning the conductance in nanofluidic systems at salt concentrations of 100 mM or higher has been a persistent challenge. The primary reasons are (i) the short electrostatic proximity length,…
Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…
Interface localization-delocalization transitions (ILDT) occur in two-phase fluids confined in a slit with competing preferences of the walls for the two fluid phases. At low temperatures the interface between the two phases is localized at…
In this paper, we propose a novel inter-symbol interference (ISI) mitigation scheme for molecular communication via diffusion (MCvD) systems with the optimal detection interval. Its rationale is to exploit the discarded duration (i.e., the…
Fast combinational multipliers with large bit widths can occupy significant silicon area, which also drives up power consumption. Area can be reduced through resource sharing (i.e., folding) at the expense of lower throughput, which is…
Theoretically, the three-dimensional (3D) array architecture provides a higher communication degree of freedom (DoF) compared to the planar arrays, allowing for greater capacity potential in multiple-input multiple-output (MIMO) systems.…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices…
The India-Based Neutrino Observatory (INO) collaboration houses the miniICAL detector, at the transit campus of IICHEP, Madurai, India, which serves as a prototype-detector of the larger Iron-Calorimeter detector (ICAL). The purpose of…
In molecular communication via diffusion (MCvD), the inter-symbol interference (ISI) is a well known severe problem that deteriorates both data rates and link reliability. ISI mainly occurs due to the slow and highly random propagation of…
The control of large-scale quantum information processors based on arrays of trapped ions requires a means to route and focus multiple laser beams to each of many trapping sites in parallel. Here, we combine arrays of fibres, 3D…
The metal-insulator transition (MIT) in correlated oxide systems opens up a new paradigm to trigger the abruption in multiple physical functionalities, enabling the possibility in unlocking exotic quantum states beyond conventional phase…
A Cosmic Muon Veto (CMV) detector using extruded plastic scintillators is being designed around the mini-Iron Calorimeter (mini-ICAL) detector at the transit campus of the India based Neutrino Observatory, Madurai for the feasibility study…
3D integration, i.e., stacking of integrated circuit layers using parallel or sequential processing is gaining rapid industry adoption with the slowdown of Moore's law scaling. 3D stacking promises potential gains in performance, power and…
The formation of a submicron optical cavity on one side of a metal-insulator-metal (MIM) tunneling device induces a measurable electrical current between the two metal layers with no applied voltage. Reducing the cavity thickness increases…
Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the…
In a recent Letter, Zhao et al. [1] reported the origin of quasi-one-dimensional metal-insulator (MI) transitions in compound semiconductor surfaces. Based on a density-functional theory (DFT) calculation within the generalized gradient…
In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface.…