Related papers: Star-Mesh Quantized Hall Array Resistance Devices
We theoretically predict a giant quantized Goos-H\"{a}nchen (GH) effect on the surface of graphene in quantum Hall regime. The giant quantized GH effect manifests itself as an angular shift whose quantized step reaches the order of mrad for…
The zeroth Landau level (0LL) in graphene has emerged as a flat-band platform in which distinct many-body phases can be explored with unprecedented control by simply tuning the strength and/or direction of magnetic fields1-22. A rich set of…
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance…
Quantum Hall (QH) interferometry provides an archetypal platform for the experimental realization of braiding statistics of fractional QH states. However, the complexity of observing fractional statistics requires phase coherence over the…
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths…
We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy…
We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We…
There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in…
We introduce a novel platform for realizing interaction-induced Hall crystals with diverse Chern numbers $C$. This platform consists of a two-dimensional semiconductor or graphene subjected to an out-of-plane magnetic field and a…
Recent experiments on rhombohedral pentalayer graphene flakes with a substrate induced moir\'e potential have identified both Chern insulators and fractional Quantum Hall states in the absence of an applied magnetic field. Surprisingly,…
We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 {\Omega} per square over macroscopic scales, and obtained…
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
We have revealed from a numerical study that the optical Hall conductivity $\sigma_{xy}(\omega)$ has a characteristic feature even in the ac ($\sim$ THz) regime in that the Hall plateaus are retained both in the ordinary two-dimensional…
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…
We critically analyze the recently reported observation of integer (IQAHE) and fractional (FQAHE) quantum anomalous Hall effects at zero applied magnetic field in pentalayer graphene. Our quantitative activation and variable range hopping…
We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility…
In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero…
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…
We experimentally investigate electrical transport properties of graphene, which is a two dimensional (2D) conductor with relativistic energy dispersion relation. By investigating single- and bi-layer graphene devices with different aspect…