Related papers: A True Random Number Generator for Probabilistic C…
Random number generation (RNG) is a crucial element in security protocols, and its performance and reliability are critical for the safety and integrity of digital systems. This is especially true in 5G networks with many devices with low…
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…
A high-speed random number generator (RNG) circuit based on magnetoresistive random-access memory (MRAM) using an error-correcting code (ECC) post processing circuit is presented. ECC post processing increases the quality of randomness by…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
We present a simple and robust construction of a real-time quantum random number generator (QRNG). Our minimalist approach ensures stable operation of the device as well as its simple and straightforward hardware implementation as a…
As a vital security primitive, the true random number generator (TRNG) is a mandatory component to build roots of trust for any encryption system. However, existing TRNGs suffer from bottlenecks of low throughput and high area-energy…
This paper introduces an analog-to-stochastic converter using a magnetic tunnel junction (MTJ) device for vision chips based on stochastic computation. Stochastic computation has been recently exploited for area-efficient hardware…
Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
In this work, we experimentally demonstrate that it is possible to generate true random numbers at high throughput and low latency in commercial off-the-shelf (COTS) DRAM chips by leveraging simultaneous multiple-row activation (SiMRA) via…
We demonstrate a method to generate application-ready truly random bits from a magnetic tunnel junction driven by a Field-Programmable Gate Array (FPGA). We implement a real-time feedback loop that stabilizes the switching probability near…
Superparamagnetic tunnel junctions (SMTJs) are promising sources of randomness for compact and energy efficient implementations of probabilistic computing techniques. Augmenting an SMTJ with electronic circuits, to convert the random…
Random Number Generators (RNGs) are crucial for applications ranging from cryptography to simulations. Depending on the source of randomness, RNGs are classified into Pseudo-Random Number Generators (PRNGs), True Random Number Generators…
Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power…
Much attention has been focused on the design of low barrier nanomagnets (LBM), whose magnetizations vary randomly in time owing to thermal noise, for use in binary stochastic neurons (BSN) which are hardware accelerators for machine…