Related papers: Carbon cluster emitters in silicon carbide
A class of silicon carbide cage clusters with two carbon atoms inside the silicon cage and with high stabilities are presented. The theoretical formalism used is Hartree-Fock theory followed by second order many body perturbation theory to…
Basic vacancy defects in twodimensional silicon carbide (2D-SiC) are examined by means of density functional theory calculations to explore their magneto-optical properties as well as their potential in quantum technologies. In particular,…
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken…
Spin-active color centers are the basis of solid-state defect systems utilized in quantum technologies. Although silicon is an emerging host material for quantum defects, there is an urgent need to characterize color centers with a non-zero…
Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with…
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…
We report a statistical analysis of sizes and compositions of clusters produced in cascades during irradiation of SiC. The results are obtained using molecular dynamics (MD) simulations of cascades caused by primary knock-on atoms (PKAs)…
Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin…
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil…
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group…
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy…
Superconductor based quantum computing has the major drawback of working temperatures which require liquid helium for cooling. A promising approach to overcome this obstacle for quantum technologies is based on deep level defects in…
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…
Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated…
Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…
This review provides an overview of defects in silicon carbide (SiC) with potential applications as quantum qubits. It begins with a brief introduction to quantum qubits and existing qubit platforms, outlining the essential criteria a…
Defects in crystalline silicon consisting of a silicon self-interstitial atom and one, two, three, or four hydrogen atoms are studied within density-functional theory (DFT). We search for low-energy defects by starting from an ensemble of…
Realization of quantum memory with a photonic interface in the telecommunication bands in a wafer-scalable platform is a central requirement for long-distance quantum networks. Silicon carbide (SiC) provides a technologically mature host…
We present Spitzer IRS spectra of four carbon stars located in the Galactic Halo and the thick disc. The spectra display typical features of carbon stars with SiC dust emission and C$_2$H$_2$ molecular absorption. Dust radiative transfer…
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…