We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics.
@article{arxiv.1901.05371,
title = {Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology},
author = {L. Spindlberger and A. Csóré and G. Thiering and S. Putz and R. Karhu and J. Ul Hassan and N. T. Son and T. Fromherz and A. Gali and M. Trupke},
journal= {arXiv preprint arXiv:1901.05371},
year = {2019}
}