Related papers: Threshold current of field-free perpendicular magn…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Continuous switching driven by spin-orbit torque (SOT) is preferred to realize neuromorphic computing in a spintronic manner. Here we have applied focused ion beam (FIB) to selectively illuminate patterned regions in a Pt/Co/MgO strip with…
Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a prerequisite for industrial deployment, but can compromise…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
Spin-orbit torques (SOTs) are widely used to control magnetization in nanoscale electric systems and are typically assumed to drive skyrmion nucleation and motion in a deterministic manner, especially in materials with strong…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…
The effect of spin currents on the magnetic order of insulating antiferromagnets (AFMs) is of fundamental interest and can enable new applications. Toward this goal, characterizing the spin-orbit torques (SOT) associated with AFM/heavy…
Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with…
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar…
Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT…
Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…
We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1…
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…
Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…
We consider current-induced spin-transfer torque on an antiferromagnet in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a…