We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1 Co1-xPtx single layers, which allows to fabricate perpendicularly magnetized CoPt single layer with composition gradient to break the inversion symmetry of the structure. By fabricating the gradient CoPt single layer, we have evaluated the SOT efficiency and successfully realized the SOT-induced magnetization switching. Our study provides an approach to realize the current-induced magnetization in the ferromagnetic single layers without attaching SOT source materials.
Cite
@article{arxiv.2101.04832,
title = {Current-induced magnetization switching in a chemically disordered A1 CoPt single layer},
author = {Zehan Chen and Lin Liu and Zhixiang Ye and Zhiren Chen and Hongnan Zheng and Wei Jia and Qi Zeng and Ning Wang and Boyuan Xiang and Tao Lin and Jing Liu and Mingxia Qiu and Shunpu Li and Ji Shi and Peigang Han and Hongyu An},
journal= {arXiv preprint arXiv:2101.04832},
year = {2021}
}