Related papers: Current-induced magnetization switching in a chemi…
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
We report spin-orbit torques (SOT) in L10-ordered perpendicularly magnetized FePt single layer, which is significantly influenced by disorder. Recently, self-induced SOT in L10-FePt single layer has been investigated, which is ascribed to…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…
Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
Exploiting current-induced spin-orbit torques (SOTs) to manipulate the magnetic state of dipolar-coupled nanomagnet systems with in-plane magnetic anisotropy, such as artificial spin ices, provides a route to local,…
Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a…
Planar current-induced magnetization switching (CIMS) driven by spin-orbit torque (SOT) requires an in-plane uniaxial magnetic anisotropy (UMA), which can be induced by oblique-angle sputter deposition of the heavy-metal underlayer in…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the…
We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a…
Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…
Molecular beam epitaxy is used to fabricate magnetic single and double layer junctions which are deposited in prefabricated nanostencil masks. For all Co | Cu | Co double layer junctions we observe a stable intermediate resistance state…
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a…