Related papers: Inducing or suppressing the anisotropy in multilay…
We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN),…
This work reports on the magnetic reversal of sub-micrometer sized elements consisting of an CoFeB/Ru/CoFeB artificial ferrimagnet (AFi). The elements were patterned into ellipses having a width of approximately 250 to 270nm and a varying…
The structure, morphology, and electrical properties of epitaxial a-axis oriented thin films of Nd(0.2)Sr(0.8)MnO(3) are reported for thicknesses 10 nm <= t <= 150 nm. Films were grown with both tensile and compressive strain on various…
Analytical solution has been found for the second-order effective anisotropy of magnetic nanoparticles of a cubic shape due to the surface anisotropy (SA) of the N\'eel type. Similarly to the spherical particles, for the simple cubic…
Magnetic anisotropy is a fundamental property of magnetic materials that determines the alignment of the spins along the preferential direction, called the easy axis of magnetization. Magnetic polycrystalline thin films offer several…
Magnetic tunnel junctions with a magnetic layer with perpendicular anisotropy are currently used in computer memories that do not require voltage sustaining. An example of layers with perpendicular magnetic anisotropy are ultrathin FeCo…
The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455 kAm-1, which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6 muB that is…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…
We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline…
Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Neel temperature (TN)…
We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal…
The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn…
Magnetic anisotropy (MA) plays a crucial role in deciding both static and dynamic behaviour of magnetic thin films. It controls various phenomena, such as magnetization reversal, domain formation, domain-wall motion, spin-wave generation,…
The magnetic and transport properties of La$_{0.5}$Sr$_{0.5}$CoO$_{3-\delta}$ film grown on a LaAlO$_3$ substrate by pulsed-laser deposition are studied. The properties are found to be influenced by a combined influence of the magnetic…
Thin films of the Single Molecule Magnet (Mn12-acetate) have been fabricated on a Si-substrate by the Dip-and-Dry method, a simple and robust technique. Atomic force microscopy and X-ray photoelectron spectroscopy characterizations reveal…
We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before…
In previous experiments, thin films of L1$\mathrm{_0}$ FeNi with different surfaces, including (001), (110) and (111), were produced and studied. Each surface defines a different alignment of the crystallographic tetragonal axis with…
We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…