Related papers: Back-end and Flexible Substrate Compatible Analog …
The current work reports an efficient deep neural network (DNN) accelerator where synaptic weight elements are controlled by ferroelectric domain dynamics. An integrated device-to-algorithm framework for benchmarking novel synaptic devices…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear…
Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However,…
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data…
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET)…
An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least significant bits (LSBs) used solely during training, and…
In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language…
This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…
In this letter, we quantify the impact of device limitations on the classification accuracy of an artificial neural network, where the synaptic weights are implemented in a Ferroelectric FET (FeFET) based in-memory processing architecture.…
The discovery of two-dimensional (2D) ferroelectrics with switchable out-of-plane polarization such as monolayer $\alpha$-In$_2$Se$_3$ offers a new avenue for ultrathin high-density ferroelectric-based nanoelectronics such as ferroelectric…
The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances…
Neuromorphic systems seek to replicate the functionalities of biological neural networks to attain significant improvements in performance and efficiency of AI computing platforms. However, these systems have generally remained limited to…