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Related papers: Full control of solid-state electrolytes for elect…

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…

Materials Science · Physics 2025-12-03 Ang Feng , Alexander Karl , Dominic Waldhör , Marina Avramenko , Peter Moens , Tibor Grasser

We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 Kouji Segawa , Zhi Ren , Satoshi Sasaki , Tetsuya Tsuda , Susumu Kuwabata , Yoichi Ando

This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…

Surfaces of ionic solids interacting with an ionic solution can build up charge by exchange of ions. The surface charge is compensated by a strip of excess charge at the border of the electrolyte forming an electric double layer. These…

Chemical Physics · Physics 2016-12-21 Chao Zhang , Michiel Sprik

Space Charge (SC) distortions are some of the main issues for high-resolution Time Projection Chambers (TPC). The two main SC sources are those from primary ionizations and those that result from amplification stages. The gain stages are…

Instrumentation and Detectors · Physics 2020-08-26 Vladislav Zakharov , Prakhar Garg , Thomas Hemmick , Klaus Dehmelt

Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a…

Superconductivity · Physics 2024-09-24 Thibault Sohier , Marco Gibertini , Ivar Martin , Alberto F. Morpurgo

The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moir\'e engineering. However,…

Mesoscale and Nanoscale Physics · Physics 2025-04-28 Qiao Chen , Chengyu Yan , Changshuai Lan , Qiyang Song , Yi Yan , Shun Wang

A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…

Next-generation high-efficiency Li-ion batteries require an electrolyte that is both safe and thermally stable. A possible choice for high performance all-solid-state Li-ion batteries is a liquid crystal, which possesses properties…

We realized ambipolar Field-Effect Transistors by coupling exfoliated thin flakes of tungsten disulphide (WS2) with an ionic liquid-dielectric. The devices show ideal electrical characteristics, including very steep sub-threshold slopes for…

Mesoscale and Nanoscale Physics · Physics 2013-02-07 Daniele Braga , Ignacio Gutiérrez Lezama , Helmuth Berger , Alberto F. Morpurgo

We present an analysis of gated InGaAs/InAlAs heterostructures, a device platform to realize spinorbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate…

Mesoscale and Nanoscale Physics · Physics 2022-01-14 Michael Prager , Michaela Trottmann , Jaydean Schmidt , Lucia Ebnet , Dieter Schuh , Dominique Bougeard

Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

Introducing, observing, and manipulating individual impurities coupled to a host material offers the opportunity to create new device concepts based on single spin and charge states. Because of potential applications in spintronics and…

Mesoscale and Nanoscale Physics · Physics 2016-09-29 Paolo Sessi , Thomas Bathon , Konstantin A. Kokh , Oleg E. Tereshchenko , Matthias Bode

Solid-state electrolyte batteries are expected to replace liquid electrolyte lithium-ion batteries in the near future thanks to their higher theoretical energy density and improved safety. However, their adoption is currently hindered by…

Finding more efficient ways of exploring the doping phase diagrams of high temperature superconductors as well as probing the fundamental properties of these materials are essential ingredients for driving the discovery of new materials. We…

Superconductivity · Physics 2015-10-28 J. Kinney , J. Garcia-Barriocanal , A. M. Goldman

Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and…

Wigner crystals are typically confined to ultralow temperatures where thermal motion is frozen out. Moir\'e superlattices in twisted two-dimensional materials have extended their stability to higher temperatures and densities, but rely on…

In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature.…

High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these…

Materials Science · Physics 2015-05-20 S. Ono , N. Minder , Z. Chen , A. Facchetti , A. F. Morpurgo
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