Related papers: A strain-controlled magnetostrictive pseudo spin v…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate…
We report on magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi-YIG) thin films and mesoscale patterned structures deposited on a PMN-PT substrate with the application of voltage-induced strain. The Bi content is…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change of the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching (the SSV effect) is…
We have studied the interaction between magnetism and superconductivity in a pseudo-spin-valve structure consisting of a Co/Cu/Py/Nb layer sequence. We are able to control the magnetization reversal process and monitor it by means of the…
Electric-field control of magnetism without electric currents potentially revolutionizes spintronics towards ultralow power. Here by using mechanically coupled phase field simulations, we computationally demonstrate the application of the…
The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers.…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3…
In this work we show the presence of a magnetoelectric coupling in silicon-nitride gated Pt/Co/Pt heterostructures using X-ray photoemission electron microscopy (XPEEM). We observe a change in magnetic anisotropy in the form of domain wall…
Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz…
The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to…
The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials for tuning magnetic properties to the desired level. Here,…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in…
We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…