Related papers: A strain-controlled magnetostrictive pseudo spin v…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode…
Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In…
Through systematics density functional calculations, the mechanism of the substrate induced spin reorientation transition in FePc/O-Cu(110) was explained in terms of charge transfer and rearrangement of Fe-d orbitals. Moreover, we found…
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
We study the spectral characteristics of spin current nano-oscillators based on the Pt/[Co/Ni] magnetic multilayer with perpendicular magnetic anisotropy. By varying the applied magnetic field and current, both localized and propagating…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular…
Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood…
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by…
We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
Based on first principles calculations we investigate the electronic and magnetic properties of Pt layers in Pd$(001)$/Co/Pt thin film structures exposed to an external electric field. Due to the Co underlayer, the surface Pt layers have…
Using He+ ion irradiation, we demonstrate how the magnetodynamic properties of both ferromagnetic layers in all-perpendicular [Co/Pd]/Cu/[Co/Ni] spin valves can be tuned by varying the He+ ion fluence. As the perpendicular magnetic…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by…
Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile…