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The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in…

We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different…

The control of the magnetism of ultra-thin ferromagnetic layers using an electric field rather than a current, if large enough, would lead to many technologically important applications. To date, while it is usually assumed the changes in…

Materials Science · Physics 2013-12-05 Stewart E. Barnes , Jun'ichi Ieda , Sadamichi Maekawa

Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which…

Materials Science · Physics 2013-12-03 Fatih Zighem , Damien Faurie , Silvana Mercone , Mohamed Belmeguenai , Halim Haddadi

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of…

We report on a method to tune the orientation of in-plane magnetic domains and domain walls in thin ferromagnetic strips by manipulating the magnetic anisotropy. Uniaxial in-plane anisotropy is induced in a controlled way by oblique…

Other Condensed Matter · Physics 2007-09-17 S. Cherifi , R. Hertel , A. Locatelli , Y. Watanabe , G. Potdevin , A. Ballestrazzi , M. Balboni , S. Heun

We reversibly switch the polar environment of an individual magnetic atom with an electric field to control the energy barrier for reversal of magnetization. By applying an electric field in the gap between the tip and sample of a scanning…

Mesoscale and Nanoscale Physics · Physics 2023-03-01 Jose Martinez-Castro , Cyrus F. Hirjibehedin , David Serrate

An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between…

Mesoscale and Nanoscale Physics · Physics 2010-04-12 E. Jaromirska , P. Balaz , L. Lopez Diaz , J. Barnas

We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via…

Mesoscale and Nanoscale Physics · Physics 2015-02-24 J. Kleinlein , G. Schmidt

We have studied anisotropic magnetoresistance (MR) and magnetization with rotating magnetic field (B) within $CuO_2$ plane in lightly doped AF $Nd_{2-x}Ce_xCuO_{4}$. \emph{A giant anisotropy} in MR is observed at low temperature below 5 K.…

Superconductivity · Physics 2009-11-13 T. Wu , C. H. Wang , G. Wu , D. F. Fang , J. L. Luo , G T. Liu , X. H. Chen

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…

We introduce the notion of inverse effect of magnetostriction for magnetostrictive/piezoelectric heterostructures and study this effect theoretically and experimentally. It is shown that the inverse effect of magnetostriction may crucially…

Materials Science · Physics 2019-05-28 M. Auslender , E. Liverts , B. Zadov , A. Elmalem , A. Zhdanov , A. Grosz , E. Paperno

Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at…

Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…

We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching…

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the…

A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…

Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ N\'{e}el domain wall in a…

Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and…

A topological modulation of magnetic thin films can induce a magnetic anisotropy of magnetostatic origin. In this letter, we report on the magnetic properties of NiFe layers deposited on wavy shaped Si substrates. Without any modulation,…

Materials Science · Physics 2009-01-20 J. Briones , F. Montaigne , G. Lengaigne , D. Lacour , M. Hehn