Related papers: Impurity-Driven Metal-Insulator Transitions in Hol…
Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within the Gutzwiller approximation. For any rational filling with $x$ (integer) electrons per site it is found that metal-insulator transition…
We present a comprehensive numerical investigation of the gate-induced insulator-to-metal transition in the charge-density-wave (CDW) phase of the Holstein model. Large-scale Brownian dynamics simulations are performed, in which the forces…
The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is Analytically solved. At a sufficiently high density of charge carriers, the density dependence…
We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3…
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…
We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
Laser blow-off injections of aluminum and tungsten have been performed on the DIII-D tokamak to investigate the variation of impurity transport in a set of dedicated ion and electron heating scans with a fixed value of the external torque.…
We study charge transport across the metal-insulator crossover in the half-filled two-dimensional Hubbard model, with particular emphasis on precision control. The dynamic current-current correlation function is obtained directly in the…
In this manuscript, recent theoretical investigations by the authors in the area of oxide multilayers are briefly reviewed. The calculations were carried out using model Hamiltonians and a variety of non-perturbative techniques. Moreover,…
We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…
Moir\'e superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. We report on an exact diagonalization…
We address an inverse problem in modeling holographic superconductors. We focus our research on the critical temperature behavior depicted by experiments. We use a physics-informed neural network method to find a mass function $M(F^2)$,…
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…
For the first order Metal Insulator Transitions we show that together with the d.c conductance zero there is a second critical point, where the dielectric constant becomes zero and further turns negative. At this point the metallic…
By means of exact diagonalizations, the Bernevig-Hughes-Zhang model at quarter-filling in the limit of strong Hubbard on-site repulsion is investigated. We find that the non-interacting metallic state will be turned into a Chern insulator…
We study a holographic model which exhibits a quantum phase transition from the strongly interacting Weyl semimetal phase to an insulating phase. In the holographic insulating phase there is a hard gap in the real part of frequency…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…
The strong coupling diagram technique is used for investigating states near the metal-insulator transition in the half-filled two-dimensional repulsive Hubbard model. The nonlocal third-order term is included in the irreducible part along…