Related papers: Simulation studies of Single Event Effects in Ga$_…
Dependence of the secondary electron yield (SEY) from the primary beam incident energy and the coverage has been measured for neon, argon, krypton and xenon condensed on a target at 4.2K. The beam energy ranged between 100 eV and 3 keV, the…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
A one dimensional Vlasov Poisson simulation code is employed to investigate the plasma sheath considering electron induced secondary electron emission (SEE) and backscattering. The SEE coefficient is commonly treated as constant in a range…
The spin Seebeck effect (SSE) is a phenomenon of thermoelectric generation that occurs within a device consisting of a bilayer of a metal and a ferromagnet. When Tb$_3$Fe$_5$O$_{12}$ (TbIG) is substituted for the ferromagnet, the effect…
Local metal interconnection is widely used in modern complementary metal oxide semiconductor (CMOS) technology. The most frequently used local materials are some heavy metals, such as tungsten (W) or copper (Cu). It's well known that single…
A theoretical investigation of extremely high field transport in an emerging wide-bandgap material $\beta-Ga_2O_3$ is reported from first principles. The signature high-field effect explored here is impact ionization. Interaction between a…
A combination of many Solar energetic particle (SEP) events, each one of which is associated with a single eruption, can create one complex intensity-time profile, that will result in masking the observation of the first injected particles…
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…
Within a transport code simulation for heavy-ion collisions at bombarding energies around 1 AGeV, we demonstrate that double-differential di-electron spectra with suitable kinematical cuts are useful to isolate (i) the $\rho$ meson peak…
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by…
Heavy ions induced single event upset (SEU) sensitivity of three-dimensional integrated SRAMs are evaluated by using Monte Carlo sumulation methods based on Geant4. The cross sections of SEUs and Multi Cell Upsets (MCUs) for 3D SRAM are…
Superconducting radio frequency accelerating cavities made with different material layers, such as copper, Nb or Nb3Sn, are susceptible to thermoelectric effects due to differences in Seebeck coefficients between the metals. A temperature…
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual…
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less…
This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed…
We present simulation results of a gradual solar energetic particle (SEP) event detected on 2021 October 9 by multiple spacecraft, including BepiColombo (Bepi) and near-Earth spacecraft such as the Advanced Composition Explorer (ACE). A…
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation…
This paper presents a stochastic three-dimensional (3D) focused transport simulation of solar energetic particles (SEPs) produced by a data-driven coronal mass ejection (CME) shock propagating through a data-driven model of coronal and…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…