Related papers: Simulation studies of Single Event Effects in Ga$_…

Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power…

We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion…

Designing integrated circuits in radiation environments such as the High Luminosity LHC (HL-LHC) is challenging. Integrated circuits will be exposed to radiation-induced Single Event Effects (SEE). In deep sub-micron technology devices, the…

Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the…

Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction.…

Single Event Latch-up (SEL) is one of the prime concerns for CMOS ICs used in space systems. Galactic Cosmic Rays or Solar Energetic Particles (SEP) may trigger the parasitic latch up circuit in CMOS ICs and cause increase in current beyond…

In neutrinoless double beta (0{\nu}{\beta}{\beta}) decay experiments, the diversity of topological signatures of different particles provides an important tool to distinguish double beta events from background events and reduce background…

We present a new empirical model to predict solar energetic particle (SEP) event-integrated and peak intensity spectra between 10 and 130 MeV at 1 AU, based on multi-point spacecraft measurements from the Solar TErrestrial RElations…

Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future…

Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_\mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_\mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial…

Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga$_{2}$O$_{3}$ devices. In this simulation work, we propose a novel role for $p$-type available heterosubstrates, as a component of a reduced…

Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of…

Ultrawide bandgap semiconductor $\beta$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage…

We present calculations of secondary electron emission (SEE) yields in tungsten as a function of primary electron energies between 50 eV and 1 keV and incidence angles between 0 and 90{\deg}. We conduct a review of the established Monte…

We present experimental results of the cross-section related to cosmic-ray irradiation at ground level for minimum-sized six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories implemented on a 65 nm CMOS standard…

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…

We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels…

Irradiation with high-energy particles has recently emerged as an effective tool for tailoring the properties of two-dimensional transition metal dichalcogenides. In order to carry out an atomically-precise manipulation of the lattice, a…

Aims. We studied the first multi-spacecraft high-energy solar energetic particle (SEP) event of solar cycle 25, which triggered a ground level enhancement (GLE) on 28 October 2021, using data from multiple observers that were widely…