Related papers: Voltage-Controlled Magnon Transistor via Tunning I…
We develop a linear-response transport theory of diffusive spin and heat transport by magnons in magnetic insulators with metallic contacts. The magnons are described by a position dependent temperature and chemical potential that are…
In magnetic systems, angular momentum is carried by spin and orbital degrees of freedom. Nonlocal devices, comprising heavy-metal nanowires on magnetic insulators like yttrium iron garnet (YIG), enable angular momentum transport via…
A quantum thermal device based on three nearest-neighbor coupled spin-1/2 systems controlled by the magnetic field is proposed. We systematically study the steady-state thermal behaviors of the system. When the two terminals of our system…
Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly…
Electric control over magnetic interactions at the level of individual spins is relevant for a variety of quantum applications, such as qubits, memory and sensor functionality. We show here that spin lattices and magnon gaps can be…
We theoretically investigate magnon heat transport in an antiferromagnetic (AFM) insulator containing a domain wall (DW) in the presence of a magnetic field applied along the easy axis. We show that the intrinsic spin of the DW couples to…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Ferromagnetic metals and insulators are widely used for generation, control and detection of magnon spin signals. Most magnonic structures are based primarily on either magnetic insulators or ferromagnetic metals, while heterostructures…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…
A hybrid system established by the direct interaction between a magnon mode and a superconducting transmon qubit is used to realize a high-degree blockade for magnon. It is a fundamental way toward quantum manipulation at the level of a…
Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for…
Magnons, the quanta of spin waves, could be used to encode information in beyond-Moore computing applications, and magnonic device components, including logic gates, transistors, and units for non-Boolean computing, have already been…
We propose an in-plane magnon valve (MV), a sandwich structure composed of ferromagnetic insulator/heavy metal/ferromagnetic insulator (MI/HM/MI). When the magnetizations of the two MI layers are parallel, the longitudinal conductance in…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
The spin excitations of ordered magnets - magnons - mediate transport in magnetic insulators. Their bosonic nature makes them qualitatively distinct from electrons. These features include quantum properties traditionally realized with…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…