Related papers: Voltage-Controlled Magnon Transistor via Tunning I…
We study the spin Hall magnetoresistance (SMR) and the magnon spin transport (MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces. Our measurements show that the surface treatment of the YIG film results in a…
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant research activity driven by its profound physics and enormous potential for application. This review article aims to provide a comprehensive…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient,…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
In a semiconductor hererostructure, the Coulomb interaction is responsible for the electric current drag between two 2D electron gases across an electron impenetrable insulator. For two metallic layers separated by a ferromagnetic insulator…
Magnetically ordered, electrically insulating materials pave the way towards novel spintronic devices. In these materials the flow of magnetic excitations such as magnons results in pure spin currents. These spin currents can be driven by…
Noncollinear frustrated magnets are proposed as a new class of spintronic materials with high magnetoresistance which can be controlled with relatively small applied voltages. It is demonstrated that their magnetic configuration strongly…
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…
Magnon drag effect induced by an applied electric field in ferromagnetic metals is theoretically studied by a microscopic calculation of the force on magnons arising from magnon emission/absorption and scattering due to driven electrons. It…
The ability to manipulate entanglement between multiple spatially-separated qubits is essential for quantum information processing. Although nitrogen-vacancy (NV) centers in diamond provide a promising qubit platform, developing scalable…
The transistor transformed not only electronics but everyday life, and the integrated circuit - now simply the "chip" - made computation scalable and ubiquitous. Magnonics has long promised a parallel path to low-energy information…
The pursuit of beyond-Moore information technologies has stimulated the exploration of novel information carriers, such as electron spin, orbital, and magnon, beyond electron charge. Efficient interconversion among these degrees of freedom…
We report a gate-tunable Josephson diode effect in hybrid nanowire junctions consisting of a spin-orbit-coupled semiconductor core coated with epitaxial ferromagnetic insulator and superconductor shells. The wires display a hysteretic…
We demonstrate gate-tunable giant field-dependent nonreciprocal transport (magnetochiral anisotropy) in a noncentrosymmetric superconductor $T_{\rm d}$-MoTe$_2$ in the thin limit. Giant magnetochiral anisotropy (MCA) with a rectification…
We present a unified quantum field theory for Dirac magnons coupled to emergent gauge fields. At zero temperature, any space- and time-dependent gauge perturbation drives magnons out of equilibrium, generating spin currents and magnon…
The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…