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$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application…
Photoemission experiments involve the motion of an electron near a conducting surface. This necessarily generates heat by ohmic losses from eddy currents. This inelastic scattering of the electrons will result in a downward shift in…
Periodic arrays of noble metal nanoparticles are emblematic nanostructures in photonics. Their ability to sustain localized surface plasmon resonances has been used throughout the years to demonstrate a variety of passive and active…
We analyze theoretically magnetoresistance of high mobility two-dimensional electron systems being illuminated by multiple radiation sources. In particular, we study the influence on the striking effect of microwave-induced resistance…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…
The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
We have fabricated ultra-thin YBa2Cu3O7-x nanowires with a high critical current density and studied their voltage switching behavior in the 4.2 - 90 K temperature range. A comparison of our experimental data with theoretical models…
In this work, we report a new nanoscale phenomenon observed as photoemission intermittency (On-Off electron emission), manifested as stochastic bursts in electron yield at quasi-one-dimensional organic wires and silver nanoparticles…
Nanoscale gaps between adjacent metallic nanostructures give rise to extraordinarily large field enhancements, known as "hot spots", upon illumination. Incident light with the electric field polarized across the gap (along the interparticle…
We report on experimental and theoretical studies of microwave-induced resistance oscillations in a two-dimensional electron gas over a wide range of microwave intensities. We observe a distinct crossover from linear to sublinear power…
Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is…
Photoresponsivity studies of wide-bandgap oxide-based devices have emerged as a vibrant and popular research area. Researchers have explored various material systems in their quest to develop devices capable of responding to illumination.…
Microwave photonics uses light to carry and process microwave signals over a photonic link. However, light can instead be used as a stimulus to microwave devices that directly control microwave signals. Such optically controlled amplitude…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Two-dimensional (2D) layered ferroelectrics, as an emerging area of research, have attracted extensive attention, while memristors based on new 2D ferroelectric materials have yet to be fully explored, thereby limiting their applications in…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…