Related papers: A Guideline for Silicon Carbide MOSFET Thermal Cha…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
Silicon carbide silicon carbide (SiC SiC) composites are often used in oxidizing environments at high temperatures. Measurements of the thermal conductance of the oxide layer provide a way to better understand the oxidation process with…
Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
In a hard switched MOSFET based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary…
Thermal conductivity and interfacial thermal conductance play crucial roles in the design of engineering systems where temperature and thermal stress are of concerns. To date, a variety of measurement techniques are available for both bulk…
We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and…
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature…
Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly…
Ductile Regime Machining of semiconductors (DRM) offers higher quality of the resulting surfaces. To optimize this process, it is required to understand the thermal kinetics of silicon metallization under pressure. Such understanding is not…
This paper analyzes a transient method for the characterization of low-resistance thermal interfaces of microelectronic packages. The transient method can yield additional information about the package not available with traditional static…
Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
Control of thermal emission is important in a number of applications from thermal energy harvesting and management and sensing of gas and chemical to thermal camouflage. Semiconductor-based devices can be engineered to enable electrical…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values…
The heart of every switched mode converter consists of several switching semiconductor elements. Due to their non-ideal behaviour there are ON state and switching losses heating up the silicon chip. That heat must effectively be transferred…
The thermo-electrical properties of a complex silicon cantilever structure used in thermal scanning probe lithography are modeled based on well established empirical laws for the thermal conductivity in silicon, the electrical conductivity…
Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this…