English
Related papers

Related papers: Reverse Doping Asymmetry in Semiconductor Thin Fil…

200 papers

A reduction of the density of states near the Fermi energy in the normal state (pseudogap) of high-temperature oxide superconductors is examined on the basis of the two-dimensional tight-binding model with effective interactions due to…

Superconductivity · Physics 2009-10-31 Hiroshi Shimahara , Yasumasa Hasegawa , Mahito Kohmoto

Motivated by the physics literature on "photonic doping" of scatterers made from "epsilon-near-zero" (ENZ) matrials, we consider how the scattering of time-harmonic TM electromagnetic waves by a cylindrical ENZ region $\Omega \times…

Analysis of PDEs · Mathematics 2022-09-20 Robert V. Kohn , Raghavendra Venkatraman

Perpendicular magnetic anisotropy was found to be highly sensitive to the nominal thickness and morphology of laterally heterogeneous CoPd films in the vicinity of the metal insulator transition. We used the effect to tune the anisotropy by…

Materials Science · Physics 2022-05-04 Gregory Kopnov , Alexander Gerber

High-transition-temperature superconductivity arises in copper oxides when holes or electrons are doped into the CuO2 planes of their insulating parent compounds. While hole-doping quickly induces metallic behavior and superconductivity in…

A simple model of cuprate superconductivity with an electron spectrum prepared by doping is developed. The pair-transfer interaction couples the itinerant band with two components ("hot'' and "cold'') of the defect subsystem. There are…

Superconductivity · Physics 2007-05-23 N. Kristoffel , P. Rubin

We investigate the origin of matching effect observed in disordered superconducting NbN thin films with periodic array of holes. In addition to the periodic variation in the electrical resistance just above the superconducting transition…

Mesoscale and Nanoscale Physics · Physics 2015-12-07 Sanjeev Kumar , Chandan Kumar , John Jesudasan , Vivas Bagwe , Pradnya Parab , Pratap Raychaudhuri , Sangita Bose

We envision the use of an indium tin oxide (ITO) thin film as part of a bi-layered silicon-photonics subwavelength device to boost nonlinearity-assisted all-passive nonreciprocal behavior. The asymmetric p-polarized oblique excitation of a…

Optics · Physics 2025-09-24 Diego M. Solís , Nader Engheta

Among the wide bandgap semiconductors, TiO$_{2}$ is the highly stable and cost-efficient semiconductor used for the different photocatalysis processes like water splitting, chemical waste degradation, anti-micro bacterial activities, and…

Materials Science · Physics 2022-07-27 Manish K Vishwakarma , Manjeet , Puneet Jain

Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the…

Strongly Correlated Electrons · Physics 2018-06-04 Tao Jia , Slavko N. Rebec , Shujie Tang , Kejun Xu , Hafiz M. Sohail , Makoto Hashimoto , Dong-Hui Lu , Robert G. Moore , Zhi-Xun Shen

In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon…

Superconductivity · Physics 2015-03-05 Matteo Calandra , Paolo Zoccante , Francesco Mauri

In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If…

Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H…

Optics · Physics 2024-05-13 S M Iftiquar

We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect…

Materials Science · Physics 2016-11-03 David S. Sukhdeo , Krishna C. Saraswat , Birendra , Dutt , Donguk Nam

The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this…

Materials Science · Physics 2022-03-22 Maciej P Polak , Paweł Scharoch , Robert Kudrawiec

A recent highlight in the study of high-Tc superconductors is the observation of band renormalization / self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by…

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…

The thermal conductivity k of the iron-arsenide superconductor K-Ba122 was measured down to 50 mK in a magnetic field up to 15 T, for a heat current parallel and perpendicular to the tetragonal c axis. In the range from optimal doping (x ~…

Metasurfaces based on subwavelength resonators enable novel ways to manipulate the flow of light at optical interfaces. In pursuit of multifunctional or reconfigurable metadevices, efficient tuning of macroscopic performance with little…

Optics · Physics 2020-12-24 Min Li , Zuojia Wang , Wenyan Yin , Erping Li , Hongsheng Chen

The interplay of competing orders is relevant to high-temperature superconductivity known to emerge upon suppression of a parent antiferromagnetic order typically via charge doping. How such interplay evolves at low temperature---in…

Strongly Correlated Electrons · Physics 2017-07-14 Zuo-Dong Yu , Yuan Zhou , Wei-Guo Yin , Hai-Qing Lin , Chang-De Gong

Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of…

Materials Science · Physics 2009-11-07 Paul E. Lammert , Vincent H. Crespi , Angel Rubio