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A family of titanium oxypnictide materials BaTi2Pn2O (Pn = pnictogen) becomes superconducting when a charge and/or spin density wave is suppressed. With hole doping, isovalent doping and pressure, a whole range of tuning parameters is…

Superconductivity · Physics 2021-12-02 Han-Xiang Xu , Daniel Guterding , Harald O. Jeschke

Substitutional doping effectively modulates carrier polarity of semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) like MoS2. Although Fe doping typically induces n-type conductivity in monolayer MoS2, anomalous…

The experimental observation of superconductivity in LaFeAsO appearing on doping is analyzed with the group-theoretical approach that evidently led in a foregoing paper (J. Supercond 24:2103, 2011) to an understanding of the cause of both…

Superconductivity · Physics 2021-06-08 Ekkehard Krüger , Horst P. Strunk

In-situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the $G^-$ band, accompanied by a…

Mesoscale and Nanoscale Physics · Physics 2009-09-29 Anindya Das , A. K. Sood , A. Govindaraj , A. Marco Saitta , Michele Lazzeri , Francesco Mauri , C. N. R Rao

Effects of inhomogeneous doping on the high-$T_c$ cuprate superconductors are studied within the framework of the t-J model. Especially, the boundary between two non-superconducting regions with doping rates much higher and lower than the…

Strongly Correlated Electrons · Physics 2007-05-23 M. Hayashi , H. Ebisawa

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent…

Mesoscale and Nanoscale Physics · Physics 2011-07-26 Yijian Ouyang , Stefano Sanvito , Jing Guo

The non-destructive estimation of doping concentrations in semiconductor devices is of paramount importance for many applications ranging from crystal growth, the recent redefinition of the 1kg to defect, and inhomogeneity detection. A…

Numerical Analysis · Mathematics 2023-04-13 Stefano Piani , Patricio Farrell , Wenyu Lei , Nella Rotundo , Luca Heltai

Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate…

Materials Science · Physics 2023-02-17 Kiran Jose , J. G. Anjana , Venu Anand , Aswathi R. Nair

Within the framework of kinetic-energy-driven superconductivity, the asymmetric doping dependence of superconductivity between the hole- and electron-doped triangular-lattice superconductors has been studied. It is shown that although the…

Superconductivity · Physics 2018-05-09 Yu Lan , Xixiao Ma , Ling Qin , Yongjun Wang , Shiping Feng

The Kohn-Luttinger mechanism for superconductivity is investigated in a model for the electron doped cuprates. The symmetry of the order parameter of the superconducting phase is determined as a function of the geometry of the Fermi surface…

Strongly Correlated Electrons · Physics 2009-11-07 Francisco Guinea , Robert S. Markiewicz , Maria A. H. Vozmediano

Ultrafast time-resolved optical spectroscopy in high-temperature superconductors enables the direct real-time measurement of non-equilibrium quasiparticle recombination dynamics. In addition, it also gives detailed information about the…

Superconductivity · Physics 2007-05-23 D. Mihailovic , J. Demsar

The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…

Materials Science · Physics 2021-07-14 Massimiliano Comin , Simone Fratini , Xavier Blase , Gabriele D'Avino

Alloying and doping are crucial for enhancing the electronic and optical properties of semiconductors while simultaneously introducing disorder. This report explores the effects of alloying and Si (0.5 at.\%) doping on…

We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time,…

Undesired unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation energy of a charged defect depends linearly on the Fermi level, doping limits…

Materials Science · Physics 2017-03-13 Kirstin Alberi , Michael A. Scarpulla

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity…

When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…

Mesoscale and Nanoscale Physics · Physics 2018-12-19 G. Dezi , N. Scopigno , S. Caprara , M. Grilli

Weyl semimetals combine topological and semimetallic effects, making them candidates for interesting and effective thermoelectric transport properties. Here, we present experimental results on polycrystalline NbP, demonstrating the…

We explain the robust p-type doping observed for quasi-free standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal…

Materials Science · Physics 2015-05-30 J. Ristein , S. Mammadov , Th. Seyller

The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples…

Materials Science · Physics 2015-06-11 R. Karmakar , S. K. Neogi , Aritra Banerjee , S. Bandyopadhyay
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