Related papers: Strained topological insulator spin field effect t…
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We study the transport properties of a hybrid junction made of a ferromagnetic lead in electrical connection with the helical edge modes of a two-dimensional topological insulator. In this system, the time reversal symmetry, which…
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a…
Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…
The emerging field of spinoptronics has a potential to supersede the functionality of modern electronics, while a proper description of strong light-matter coupling pose the most intriguing questions from both fundamental scientific and…
We reported the first spin potentiometric measurement to electrically detect spin polarization arising from spin-momentum locking in topological insulator (TI) surface states using ferromagnet/tunnel barrier contacts [1]. This method has…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
Several recent experiments on three-dimensional topological insulators claim to observe a large charge current-induced non-equilibrium ensemble spin polarization of electrons in the helical surface state. We present a comprehensive…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
We study theoretically spin pumping in bilayers consisting of superconductors and antiferromagnetic insulators. We consider both compensated and uncompensated interfaces and include both the regular scattering channel and the Umklapp…
Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states…
Introducing internal degrees of freedom in the description of topological insulators has led to a myriad of theoretical and experimental advances. Of particular interest are the effects of periodic perturbations, either in time or space, as…
Two-dimensional (2D) topological crystalline insulators (TCIs) were recently predicted in thin films of the SnTe class of IV-VI semiconductors, which can host metallic edge states protected by mirror symmetry. As thickness decreases,…
Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained…
We calculate the tunneling conductance \sigma between the surface states on the opposite sides of the ultra-thin film of a topological insulator in a parallel magnetic field B_y. The parallel magnetic produces a relative shift of the…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
The intermediate state of type-I superconductors presents a classic paradigm of modulated pattern formation, arising from the competition between short-range attractive and long-range repulsive vortex-vortex interactions. However, direct…