Related papers: Strained topological insulator spin field effect t…
We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
We investigate the spin-pumping-induced electric current on the surface of a three-dimensional topological insulator hybridized with a ferromagnet, namely, ferromagnetic topological insulator. In order to do this, we establish the…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…
The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be…
Band inversion, one of the key signatures of time-reversal invariant topological insulators (TIs), arises mostly due to the spin-orbit (SO) coupling. Here, based on ab initio density-functional calculations, we report a theoretical…
Introducing, observing, and manipulating individual impurities coupled to a host material offers the opportunity to create new device concepts based on single spin and charge states. Because of potential applications in spintronics and…
Topological insulators (TIs) hold promise as a platform for spintronics applications due to the fascinating spin-momentum locking (SML) of the surface states. One particular interest lies in using TIs as spin-polarized sources for…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an…
An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed…
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary…
Spin pumping consists in the injection of spin currents into a non-magnetic material due to the precession of an adjacent ferromagnet. In addition to the pumping of spin the precession always leads to pumping of heat, but in the presence of…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current…
In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid…