Related papers: Strained topological insulator spin field effect t…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
Hybrid superconductor-semiconductor heterostructures are promising platforms for realizing topological superconductors and exploring Majorana bound states physics. Motivated by recent experimental progress, we theoretically study how…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the…
Controlling the flow of spin and charge currents in topological insulators (TIs) is a crucial requirement for applications in quantum computation and spin electronics. We demonstrate that such control can be established in nanoscopic…
Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance,…
The spin-Seebeck effect refers to voltage signals induced in metals by thermally driven spin currents in adjacent magnetic systems. We present a theory of the spin-Seebeck signal in the case where the conductor that supports the voltage…
Ever since its discovery, the electron spin has only been measured or manipulated through the application of an electromagnetic force acting on the associated magnetic moment. In this work, we propose a spin Aharonov-Bohm effect in which…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
The simultaneous presence of seemingly incompatible properties of solids often provides a unique opportunity to address questions of fundamental and practical importance. The coexistence of ferroelectric and topological orders is one such…
We examine the effect of a spin-active interface on the symmetry of proximity-induced superconducting pairing amplitudes in topological insulators. We develop a model to investigate the leading order contribution to the pairing amplitude…
We consider thermoelectric transport properties of the edge states of a two dimensional topological insulator in a double quantum point contact geometry coupled to two thermally biased reservoirs. Both spin-preserving and spin-flipping…
We investigate spin-orbit torques on magnetization in an insulating ferromagnetic (FM) layer that is brought into a close proximity to a topological insulator (TI). In addition to the well-known field-like spin-orbit torque, we identify an…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…