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Related papers: Sub-10-micron thick Ge thin films from bulk-Ge sub…

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We report epitaxial growth and characterization of GaN thin films on sapphire (0001) substrates using low temperature GaN intermediate layer by plasma assisted molecular beam epitaxy (PA-MBE) technique. As grown and annealed GaN thin films…

Materials Science · Physics 2015-09-09 Mahitosh Biswas

Nanoscale 3D surface modifications, by scanning tunneling microscopy under ambient conditions, of La0.7Sr0.3MnO3 thin films have been performed. It was demonstrated that there are well defined combinations of bias voltages and scan speeds…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Yun Liu , Å. F. Monsen , J. E. Boschker , E. Wahlström , A. Borg , T. Tybell

Diffraction of light beams from the phase steps due to the abrupt changes in the boundary of step leads to Fresnel fringes that their visibility and intensity profile depend on the change of the step height or light incident angle. The…

Instrumentation and Detectors · Physics 2018-12-05 Ali Motazedifard , S. Dehbod , A. Salehpour

$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial…

This paper reports on formation of high aspect micro patterns on low temperature co-fired ceramic (LTCC) substrates by integrating micro inkjetting with electroless plating. Micro inkjetting was realized by using an inkjetting printer that…

Other Computer Science · Computer Science 2008-12-18 P. W. Gian , Xuechuan Shan , Y. N. Liang , B. K. Lok , C. W. Lu , B. L. Ooi

Optical reflectivity contrast provides a simple, fast and noninvasive method for characterization of few monolayer samples of two-dimensional materials. Here we apply this technique to measure the thickness of thin flakes of hexagonal Boron…

K$_{0.5}$Na$_{0.5}$NbO$_3$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O$_3$, reproducible processing of high-quality and time-stable…

We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…

Superconductivity · Physics 2013-09-27 Saumyadip Chaudhuri , Lucie Chandernagor , Manu Lahtinen , Marion Ging , Ilari Maasilta

Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging…

Mesoscale and Nanoscale Physics · Physics 2023-10-26 Azmain A. Hossain , Haozhe Wang , David S. Catherall , Martin Leung , Harm C. M. Knoops , James R. Renzas , Austin J. Minnich

We present results of a planar process development based on the combination of electron-beam lithography and dry etching for fabricating high-quality superconducting photosensitive structures in the sub-100nm regime. The devices were…

Mesoscale and Nanoscale Physics · Physics 2010-11-23 H. Bartolf , K. Inderbitzin , L. B. Gómez , A. Engel , A. Schilling

Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…

Materials Science · Physics 2013-10-08 D. Pravarthana , O. I. Lebedev , D. Chateigner , S. Hebert , P. A. Salvador , W. Prellier

Impact of rapid thermal processing (RTP) on microstructure and magnetic properties of Gd-Fe thin films have been investigated with a special emphasis to magnetic microstructure. 100 nm thick amorphous Gd-Fe film shows elongated stripe…

Mesoscale and Nanoscale Physics · Physics 2018-03-28 A. Talapatraa , J. Arout Chelvane , B. Satpati , S. Kumar , J. Mohanty

Sensitive and cost-effective Group-IV short-wave infrared (SWIR) photodetectors (PDs), compatible with complementary metal-oxide semiconductor (CMOS) processes, are crucial for various emerging applications. Here, we developed a black GeSn…

Optics · Physics 2024-12-24 Po-Rei Huang , Yue-Tong Jheng , Guo-En Chang

In-situ monitoring and calibration of nano-sculptured thin film thickness is a critical problem due to substrate tilt angle dependent porosity and mass flux. In this letter we present an analytical model for thickness dependence on…

Materials Science · Physics 2007-05-23 Cristina Buzea , Kevin Robbie

Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial…

Although nanoscale deformation, such as nanostrain in iron chalcogenide (FeSexTe1-x, FST) thin films, has attracted attention owing to the enhancement of general superconducting properties, including critical current density (Jc) and…

We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82E+6 / mm2) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular…

Mesoscale and Nanoscale Physics · Physics 2020-01-03 Xueyan Li , Xi Zhang , Xiaowei Lv , Jun Pang , Li Lei , Yong Liu , Yong Peng , Gang Xiang

By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications,…

A combinatorial thin-film synthesis approach combined with a high throughput analysis methodology was successfully applied to synthesize TiN/Ni coatings with optimum mechanical properties. The synthesis approach consists of the deposition…

5$\mu$m thick NdFeB films have been sputtered onto 100 mm Si substrates using high rate sputtering (18 $\mu$m/h). Films were deposited at ≤ 500 C and then annealed at 750 C for 10 minutes. While films deposited at temperatures up to…