Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing

Yufang Xie; Ye Yuan; Mao Wang; Chi Xu; René Hübner; Jörg Grenzer; Yu-Jia Zeng; Manfred Helm; Shengqiang Zhou; Slawomir Prucnal

doi:10.1063/1.5057733

Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing

Materials Science 2018-11-28 v1

Authors: Yufang Xie , Ye Yuan , Mao Wang , Chi Xu , René Hübner , Jörg Grenzer , Yu-Jia Zeng , Manfred Helm , Shengqiang Zhou , Slawomir Prucnal

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Abstract

Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.

Keywords

mn5ge3 epitaxial thin film ge(100) substrate flash lamp annealing spintronics curie temperature

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@article{arxiv.1810.09809,
  title  = {Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing},
  author = {Yufang Xie and Ye Yuan and Mao Wang and Chi Xu and René Hübner and Jörg Grenzer and Yu-Jia Zeng and Manfred Helm and Shengqiang Zhou and Slawomir Prucnal},
  journal= {arXiv preprint arXiv:1810.09809},
  year   = {2018}
}

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10 pages, 5 figures, submitted to Appl. Phys. Lett

Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing

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