Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

Shengqiang Zhou; Artem Shalimov; Kay Potzger; Nicole M. Jeutter; Carsten Baehtz; Manfred Helm; Juergen Fassbender; Heidemarie Schmidt

doi:10.1063/1.3264076

Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

Materials Science 2009-11-16 v1

Authors: Shengqiang Zhou , Artem Shalimov , Kay Potzger , Nicole M. Jeutter , Carsten Baehtz , Manfred Helm , Juergen Fassbender , Heidemarie Schmidt

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Abstract

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.

Keywords

mn5ge3 nanomagnets memory effect superparamagnetic blocking temperature spin-glass-like features magnetic relaxation

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@article{arxiv.0910.4095,
  title  = {Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix},
  author = {Shengqiang Zhou and Artem Shalimov and Kay Potzger and Nicole M. Jeutter and Carsten Baehtz and Manfred Helm and Juergen Fassbender and Heidemarie Schmidt},
  journal= {arXiv preprint arXiv:0910.4095},
  year   = {2009}
}

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10 pages, 4 figures,. submitted to Appl. Phys. Lett

Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

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