Related papers: Physics inspired compact modelling of BiFeO$_3$ ba…
A multilayer perovskite thin film resistive memory device has been developed comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer layer…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…
The memristors are expected to be fundamental devices for neuromorphic systems and switching applications. For example, the device made of a sandwiched layer of poly(N-vinylcarbazole) and reduced graphene composite between asymmetric…
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly…
While BiFeO3-based solid solutions show great promise for applications in energy conversion and storage, realizing this promise necessitates understanding the structure-property relationship in particular pertaining to the relaxor-like…
The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence…
In the quest for alternatives to traditional CMOS, it is being suggested that digital computing efficiency and power can be improved by matching the precision to the application. Many applications do not need the high precision that is…
In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were…
Locally-active memristors are a class of emerging nonlinear dynamic circuit elements that hold promise for scalable yet biomimetic neuromorphic circuits. Starting from a physics-based compact model, we performed small-signal linearization…
We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…
Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and…
Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
A memristive device is a novel passive device, which is essentially a resistor with memory. This device can be utilized for novel technical applications like neuromorphic computation. In this paper, we focus on anticipation - a capability…
Using first-principles calculations, the electronic and magnetic properties of orthorhombic BaFeO$_{3}$ (BFO) are investigated with local spin density approximation (LSDA). The calculations reveal that at the optimized lattice volume BFO…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Reservoir computing is a neuromorphic architecture that potentially offers viable solutions to the growing energy costs of machine learning. In software-based machine learning, neural network properties and performance can be readily…