Related papers: Physics inspired compact modelling of BiFeO$_3$ ba…
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off…
We report on linear and non-linear dielectric property measurements of BaTiO3 - CoFe2O4 (BTO-CFO) ferroelectro-magnetic nano-composites and pure BaTiO3 and CoFe2O4 samples with Scanning Near Field Microwave Microscopy. The permittivity…
We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications1. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates…
Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the…
Machine learning, particularly in the form of deep learning, has driven most of the recent fundamental developments in artificial intelligence. Deep learning is based on computational models that are, to a certain extent, bio-inspired, as…
This article presents a reconfigurable physically unclonable function (PUF) design fabricated using 65-nm CMOS technology. A subthreshold-inverter-based static PUF cell achieves 0.3% native bit error rate (BER) at 0.062-fJ per bit core…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high-performance non-volatile memory and neuromorphic…
In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance…
Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…
Memristors have shown promising features for enhancing neuromorphic computing concepts and AI hardware accelerators. In this paper, we present a user-friendly software infrastructure that allows emulating a wide range of neuromorphic…
We demonstrate high accuracy classification for handwritten digits from the MNIST dataset ($\sim$98.00$\%$) and RGB images from the CIFAR-10 dataset ($\sim$86.80$\%$) by using resistive memories based on a 2D van-der-Waals semiconductor:…
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…
We present BIFROST, a first-principles model of polarization mode dispersion (PMD) in optical fibers. Unlike conventional models, BIFROST employs physically motivated representations of the PMD properties of fibers, allowing users to…
The ability to pattern the location of pillars in epitaxial matrix-pillar nanocomposites is a key challenge to develop future technologies using these intriguing materials. One such model system employs a ferrimagnetic CoFe$_{2}$O$_{4}$…
In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP…
Graphene oxide (GO)-based resistive random access memory (RRAM) is one of the most promising emerging non-volatile memories for flexible electronics because of its simple structure and low fabrication cost. The reported switching mechanism…
Physically Unclonable Functions (PUFs) are lightweight cryptographic primitives for generating unique signatures from minuscule manufacturing variations. In this work, we present lightweight, area efficient and low power adaptive multi-bit…