Related papers: Physics inspired compact modelling of BiFeO$_3$ ba…
The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale…
Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution in the quest to realize magnetoelectric cou-pling between ferromagnetic and ferroelectric order…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
Brain-inspired computing has the potential to revolutionise the current von Neumann architecture, advancing machine learning applications. Signal transmission in the brain relies on voltage-gated ion channels, which exhibit the electrical…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
Memristor technology shows great promise for energy-efficient computing, yet it grapples with challenges like resistance drift and inherent variability. For filamentary Resistive RAM (ReRAM), one of the most investigated types of memristive…
Artificial intelligence is widely used in everyday life. However, an insufficient computing efficiency due to the so-called von Neumann bottleneck cannot satisfy the demand for real-time processing of rapidly growing data. Memristive…
There are three theoretical models which purport to relate experimentally-measurable or fabrication-controllable device properties to the memristor's operation: 1. Strukov et al's phenomenological model; 2. Georgiou et al's Bernoulli…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
Recently, oxide multiferroics have attracted much attention due to their large magnetoelectric effect which allows the tuning of magnetic properties with electric field and vice versa and open new venues for future spintronic applications…
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates…
With the emergence of IoT (Internet of things), huge amounts of sensitive data are being processed and transmitted everyday in edge devices with little to no security. Due to their aggressive power management schemes, it is a common and…
We report a density functional study on the evolution of the electronic and lattice structure in BiFeO$_3$ with injected electrons and holes. First, the self-trapping of electrons and holes were investigated. We found that the injected…
BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization…
K-ion intercalation in Prussian blue analogs (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this same ion intercalation process is the basis for nanoscale resistive switching…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
Memristors, which are characterized by their unique input-voltage-history-dependent resistance, have garnered significant attention for the exploration of next-generation in-memory computing, reconfigurable logic circuits, and neural…
The advent of memristors and resistive switching has transformed solid state physics, enabling advanced applications such as neuromorphic computing. Inspired by these developments, we introduce the concept of Mem-emitters, devices that…